SRAM Yield Estimation in the Early Stage of the Design Cycle

نویسندگان

  • Vonkyoung Kim
  • Tom Chen
چکیده

This paper describes an early memory yield prediction model using a memory sensitive area model. The proposed sensitive area prediction model calculates the sensitive area of a memory block for a given process technology and memory capacity. The model is capable of predicting the yield of a memory block in the early design phase without the detailed knowledge of the physical layout. The use of such a model in the early design stage helps to improve product quality and to reduce cost.

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تاریخ انتشار 2007